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| 2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 5 k (Typ) 1 k (Typ) 1 1 2 3 2SB1012(K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg ID * 1 1 Rating -120 -120 -7 -1.5 -3.0 20 150 -55 to +150 1.5 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) Item Symbol Min -120 -7 -- -- 2000 -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- 0.5 2.0 Max -- -- -100 -10 30000 -1.5 -2.0 -2.0 -2.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions IC = -10 mA, RBE = IE = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -1 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage hFE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test VD ton toff IC = -1 A, IB = -1 mA* 1 IC = -1.5 A, IB = -1.5 mA* IC = -1 A, IB = -1 mA* 1 1 IC = -1.5 A, IB = -1.5 mA* ID = 1.5 A* 1 1 IC = -1 A, IB1 = -IB2 = -1 mA 2 2SB1012(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) -3 -1.0 -0.3 DC (T C Area of Safe Operation iC (peak) IC (max) s 0 10 1 s Collector Current IC (A) PW = s ms 1 m 10 20 -0.1 -0.03 Ta = 25C 1 Shot pulse -0.01 -0.003 -3 =2 5C 10 0 50 100 Case Temperature TC (C) 150 -10 -30 -100 -300 Collector to emitter Voltage VCE (V) Typical Output Characteristics -5 DC current transfer ratio hFE TC = 25C Pulse -7 mA -5 mA -3 mA -1 mA DC Current Transfer Ratio vs. Collector Current 30,000 VCE = -3 V 10,000 3,000 1,000 300 100 30 -0.03 ) Collector Current IC (A) -4 -3 Ta =7 5C -2 25C -25C Pulse Test -0.5 mA -1 IB = -0.3 mA 0 -1 -2 -3 -4 -5 Collector to emitter Voltage VCE (V) -0.1 -0.3 -1.0 Collector current IC (A) -3 3 2SB1012(K) Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) -10 200 -3 -1.0 -0.3 -0.1 -0.03 -0.01 -0.03 Ta = 25C Pulse Test VCE (sat) lC/lB = 200 500 500 Switching time t (s) VBE (sat) 3 1.0 0.3 0.1 0.03 Ta = 25C VCC = -30 V IC = 500 IB1 = -500 IB2 -0.1 -0.3 -1.0 Collector current IC (A) -3 tstg ton tf 10 Switching Time vs. Collector Current -0.1 -0.3 -1.0 Collector current IC (A) -3 0.01 -0.03 Transient Thermal Resistance 100 Thermal resistance j-c (C/W) 30 10 3 1.0 0.3 TC = 25C 0.1 0.1 0.1 1.0 1.0 Time t 10 10 100 (s) 100 (ms) 0.1-100 s 0.1-100 ms 4 2SB1012(K) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 2SB1012(K) Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 6 |
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